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savantic semiconductor product specification silicon npn power transistors 2SD1380 d escription with to-126 package complement to type 2sb1009 low collector saturation voltage applications for low frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 40 v v ceo collector-emitter voltage open base 32 v v ebo emitter-base voltage open collector 5 v i c collector current 2 a p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD1380 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ;i b =0 32 v v (br)cbo collector-base breakdown voltage i c =50a ;i e =0 40 v v (br)ebo emitter-base breakdown voltage i e =50a ;i c =0 5 v v cesat collector-emitter saturation voltage i c =2.0a; i b =0.2a 0.5 0.8 v i cbo collector cut-off current v cb =20v; i e =0 1 a i ebo emitter cut-off current v eb =4v; i c =0 1 a h fe dc current gain i c =0.5a ; v ce =3v 82 390 f t transition frequency i e =-0.5a ; v ce =5v 100 mhz c ob collector output capacitance i e =0; f=1mhz ; v cb =10v 30 pf h fe classifications p q r 82-180 120-270 180-390
savantic semiconductor product specification 3 silicon npn power transistors 2SD1380 package outline fig.2 outline dimensions

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